Strain induced anisotropic effect on electron mobility in C-60 based organic field effect transistors
DSpace at IIT Bombay
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Title |
Strain induced anisotropic effect on electron mobility in C-60 based organic field effect transistors
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Creator |
NIGAM, A
SCHWABEGGER, G ULLAH, M AHMED, R FISHCHUK, II KADASHCHUK, A SIMBRUNNER, C SITTER, H PREMARATNE, M RAO, VR |
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Subject |
SEMICONDUCTORS
SILICON |
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Description |
The electron mobility was found to increase (decrease) upon applied compressive (tensile) strain, respectively, when a high-performance flexible C-60-based organic field-effect transistor (OFET) was subjected to different bending radii. The observed almost twofold relative change in the electron mobility is considerably larger than that reported before for pentacene-based OFETs. Moreover, the strain dependency of electron mobility in C-60 films is strongly anisotropic with respect to the strain direction measured relative to the current flow. Analysis within a hopping-transport model for OFET mobility suggests that the observed strain dependency on electron transport is dominated mostly by the change of inter-grain coupling in polycrystalline C-60 films. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4747451]
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Publisher |
AMER INST PHYSICS
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Date |
2014-10-15T14:08:23Z
2014-10-15T14:08:23Z 2012 |
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Type |
Article
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Identifier |
APPLIED PHYSICS LETTERS, 101(8)
http://dx.doi.org/10.1063/1.4747451 http://dspace.library.iitb.ac.in/jspui/handle/100/15064 |
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Language |
en
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