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Strain induced anisotropic effect on electron mobility in C-60 based organic field effect transistors

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Title Strain induced anisotropic effect on electron mobility in C-60 based organic field effect transistors
 
Creator NIGAM, A
SCHWABEGGER, G
ULLAH, M
AHMED, R
FISHCHUK, II
KADASHCHUK, A
SIMBRUNNER, C
SITTER, H
PREMARATNE, M
RAO, VR
 
Subject SEMICONDUCTORS
SILICON
 
Description The electron mobility was found to increase (decrease) upon applied compressive (tensile) strain, respectively, when a high-performance flexible C-60-based organic field-effect transistor (OFET) was subjected to different bending radii. The observed almost twofold relative change in the electron mobility is considerably larger than that reported before for pentacene-based OFETs. Moreover, the strain dependency of electron mobility in C-60 films is strongly anisotropic with respect to the strain direction measured relative to the current flow. Analysis within a hopping-transport model for OFET mobility suggests that the observed strain dependency on electron transport is dominated mostly by the change of inter-grain coupling in polycrystalline C-60 films. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4747451]
 
Publisher AMER INST PHYSICS
 
Date 2014-10-15T14:08:23Z
2014-10-15T14:08:23Z
2012
 
Type Article
 
Identifier APPLIED PHYSICS LETTERS, 101(8)
http://dx.doi.org/10.1063/1.4747451
http://dspace.library.iitb.ac.in/jspui/handle/100/15064
 
Language en