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Solution processed photopatternable high-k nanocomposite gate dielectric for low voltage organic field effect transistors

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Title Solution processed photopatternable high-k nanocomposite gate dielectric for low voltage organic field effect transistors
 
Creator NAVAN, RR
PRASHANTHI, K
BAGHINI, MS
RAO, VR
 
Subject Barium titanate
High-k
Nanocomposite
Organic field effect transistors (OFETs)
SU-8
THIN-FILM TRANSISTORS
POLYMER
INSULATOR
 
Description We report an organic field effect transistors (OFETs) with photo-patternable, solution processed nanoparticle composite high-k gate dielectric layer. The dielectric layer consists of Barium Titanate (BT) nanoparticles dispersed in SU-8, which makes it possible to use solution-processable methods to prepare the dielectric layer. The dielectric constant k of the nanoparticle composite films can be tuned over a wide range by varying the concentration of BT particles, which enables lower voltage operation possible with these composite gate dielectric films. OFETs with P3HT as the semiconducting layer have been demonstrated; it was found that the OFETs with the nanocomposite dielectric layer show a significant improvement in the drive current yet retaining the photopatternability, which is an advantage for circuit fabrication. The composite being a high-k enables low voltage operation (similar to 4 V) compared to pristine SU-8 as a gate dielectric operating at high voltages (similar to 40 V). Working organic transistors and inverters with a high-k nanocomposite dielectric layer (k > 13) with considerably lower leakage current have been demonstrated. This method allows low cost preparation of OFETs without the complicated gate dielectric deposition methods. (C) 2012 Elsevier B.V. All rights reserved.
 
Publisher ELSEVIER SCIENCE BV
 
Date 2014-10-15T14:14:01Z
2014-10-15T14:14:01Z
2012
 
Type Article
 
Identifier MICROELECTRONIC ENGINEERING, 9692-95
http://dx.doi.org/10.1016/j.mee.2012.02.045
http://dspace.library.iitb.ac.in/jspui/handle/100/15075
 
Language en