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Effect of phosphorus irradiation on the structural, electrical, and optical characteristics of ZnO thin films

DSpace at IIT Bombay

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Title Effect of phosphorus irradiation on the structural, electrical, and optical characteristics of ZnO thin films
 
Creator NAGAR, S
GUPTA, SK
CHAKRABARTI, S
 
Subject Zinc Oxide
Pulsed Laser Deposition
X-ray Diffraction
Atomic Force Microscopy
Hall measurements
Photoluminescence
CHEMICAL-VAPOR-DEPOSITION
ZINC-OXIDE
PHOTOLUMINESCENCE
EPILAYERS
 
Description Phosphorus irradiation at a low energy (50 key) and at a dosage of 8 x 10(14) ions/cm(2) was carried out on < 002 > ZnO films grown by using a pulsed laser deposition technique (Sample A). Subsequent rapid thermal annealing at 650 degrees C and 750 degrees C was performed to remove defects resulting from the irradiation (samples B and C, respectively). Atomic force microscopy was used to determine the root mean square roughness, which was 10.07, 8.66, and 9.31 nm for samples A, B, and C, respectively. Low-temperature photoluminescence measurements revealed increased deep-level defect peaks following irradiation; however, the subsequent annealing minimized the defects. Although the dominant donor-bound exciton peak verifies the n-type conductivity of the films, the free-electron-to-acceptor and donor-to-acceptor pair peaks in the irradiated samples confirm an increase in acceptor concentration. (C) 2012 Elsevier B.V. All rights reserved.
 
Publisher ELSEVIER SCIENCE BV
 
Date 2014-10-15T14:28:03Z
2014-10-15T14:28:03Z
2012
 
Type Article
 
Identifier JOURNAL OF LUMINESCENCE, 132(5)1089-1094
http://dx.doi.org/10.1016/j.jlumin.2011.12.058
http://dspace.library.iitb.ac.in/jspui/handle/100/15102
 
Language en