Evidence of strong acceptor peaks in ZnO thin films doped with phosphorus by plasma immersion ion implantation technique
DSpace at IIT Bombay
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Title |
Evidence of strong acceptor peaks in ZnO thin films doped with phosphorus by plasma immersion ion implantation technique
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Creator |
NAGAR, S
CHAKRABARTI, S |
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Subject |
Zinc Oxide
Plasma immersion ion implantation Scanning electron microscopy Photoluminescence Secondary ion mass spectroscopy P-TYPE ZNO MOLECULAR-BEAM EPITAXY FABRICATION ACTIVATION DOPANT |
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Description |
The photoluminescence of ZnO films implanted with phosphorus ions using plasma immersion ion implantation has been studied. The samples were rapid thermal annealed at 700-1000 degrees C. A dominant acceptor-bound exciton (A degrees X) peak around 3.35 eV was observed for the sample annealed at 1000 degrees C with no evidence of donor bound exciton peak at 3.36 eV. Moreover, the free electron-to-acceptor peak at 3.31 eV and the donor-to-acceptor pair peak at 3.22 eV certify the presence of acceptors in the annealed samples. I-V performed on p-ZnO/n-Si heterojunction diode clearly exhibited a rectifying behavior with a threshold voltage of 3.3 V. The results have been stable even after 5 months. These results show a promising method for achieving stable p-type ZnO films. (C) 2013 Elsevier B.V. All rights reserved.
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Publisher |
ELSEVIER SCIENCE BV
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Date |
2014-10-15T14:29:36Z
2014-10-15T14:29:36Z 2013 |
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Type |
Article
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Identifier |
JOURNAL OF LUMINESCENCE, 13755-58
http://dx.doi.org/10.1016/j.jlumin.2012.12.043 http://dspace.library.iitb.ac.in/jspui/handle/100/15105 |
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Language |
en
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