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Evidence of strong acceptor peaks in ZnO thin films doped with phosphorus by plasma immersion ion implantation technique

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Title Evidence of strong acceptor peaks in ZnO thin films doped with phosphorus by plasma immersion ion implantation technique
 
Creator NAGAR, S
CHAKRABARTI, S
 
Subject Zinc Oxide
Plasma immersion ion implantation
Scanning electron microscopy
Photoluminescence
Secondary ion mass spectroscopy
P-TYPE ZNO
MOLECULAR-BEAM EPITAXY
FABRICATION
ACTIVATION
DOPANT
 
Description The photoluminescence of ZnO films implanted with phosphorus ions using plasma immersion ion implantation has been studied. The samples were rapid thermal annealed at 700-1000 degrees C. A dominant acceptor-bound exciton (A degrees X) peak around 3.35 eV was observed for the sample annealed at 1000 degrees C with no evidence of donor bound exciton peak at 3.36 eV. Moreover, the free electron-to-acceptor peak at 3.31 eV and the donor-to-acceptor pair peak at 3.22 eV certify the presence of acceptors in the annealed samples. I-V performed on p-ZnO/n-Si heterojunction diode clearly exhibited a rectifying behavior with a threshold voltage of 3.3 V. The results have been stable even after 5 months. These results show a promising method for achieving stable p-type ZnO films. (C) 2013 Elsevier B.V. All rights reserved.
 
Publisher ELSEVIER SCIENCE BV
 
Date 2014-10-15T14:29:36Z
2014-10-15T14:29:36Z
2013
 
Type Article
 
Identifier JOURNAL OF LUMINESCENCE, 13755-58
http://dx.doi.org/10.1016/j.jlumin.2012.12.043
http://dspace.library.iitb.ac.in/jspui/handle/100/15105
 
Language en