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Voltage and current stress induced variations in TiN/HfSixOy/TiN MIM capacitors
DSpace at IIT Bombay
View Archive Info| Field | Value | |
| Title |
Voltage and current stress induced variations in TiN/HfSixOy/TiN MIM capacitors
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| Creator |
MISRA, D
KASINATH, J CHANDORKAR, AN |
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| Subject |
INSULATOR-METAL CAPACITORS
SILICON HFO2 |
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| Description |
In this paper we have investigated the long-term reliability of TiN/HfSixOy/TiN Metal-Insulator-Metal (MIM) capacitors by using constant voltage stress (CVS) and constant current stress (CCS). No significant increase in leakage current was observed as a function of stress time. On the other hand, stress induced capacitance changes were observed due to change in quadratic and liner coefficients of permittivity nonlinearities. Stress-induced oxygen vacancy related defect formation believed to be the cause of this shift in permittivity. (C) 2012 Elsevier Ltd. All rights reserved.
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| Publisher |
PERGAMON-ELSEVIER SCIENCE LTD
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| Date |
2014-10-15T15:37:26Z
2014-10-15T15:37:26Z 2013 |
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| Type |
Article
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| Identifier |
MICROELECTRONICS RELIABILITY, 53(2)270-273
http://dx.doi.org/10.1016/j.microrel.2012.08.020 http://dspace.library.iitb.ac.in/jspui/handle/100/15171 |
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| Language |
en
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