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Work function tuning and improved gate dielectric reliability with multilayer graphene as a gate electrode for metal oxide semiconductor field effect device applications

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Title Work function tuning and improved gate dielectric reliability with multilayer graphene as a gate electrode for metal oxide semiconductor field effect device applications
 
Creator MISRA, A
WAIKAR, M
GOUR, A
KALITA, H
KHARE, M
ASLAM, M
KOTTANTHARAYIL, A
 
Subject SIO2
 
Description Graphene with varying number of layers is explored as metal gate electrode in metal oxide semiconductor structure by inserting it between the dielectric (SiO2) and contact metal (TiN) and results are compared with TiN gate electrode. We demonstrate an effective work function tuning of gate electrode upto 0.5 eV by varying the number of graphene layers. Inclusion of even 1-3 layers of graphene results in significantly improved dielectric reliability as measured by breakdown characteristics, charge to breakdown, and interface state density. These improvements are attributed to the impermeability of graphene for TiN and hence reduced metallic contamination in the dielectric. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4726284]
 
Publisher AMER INST PHYSICS
 
Date 2014-10-15T15:37:56Z
2014-10-15T15:37:56Z
2012
 
Type Article
 
Identifier APPLIED PHYSICS LETTERS, 100(23)
http://dx.doi.org/10.1063/1.4726284
http://dspace.library.iitb.ac.in/jspui/handle/100/15172
 
Language en