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Reduced Multilayer Graphene Oxide Floating Gate Flash Memory With Large Memory Window and Robust Retention Characteristics

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Title Reduced Multilayer Graphene Oxide Floating Gate Flash Memory With Large Memory Window and Robust Retention Characteristics
 
Creator MISHRA, A
JANARDANAN, A
KHARE, M
KALITA, H
KOTTANTHARAYIL, A
 
Subject Activation energy
flash memory
multilayer graphene
program erase transient
retention
OPERATION
 
Description Reduced multilayer graphene (rMLG) is investigated as a charge storage layer (CSL) in conventional floating gate (FG) flash memory structure. A large memory window of 9.4 V at +/- 20-V program/erase and robust 10-years data retention at 150 degrees C is demonstrated. Significant over-erase observed in these memory devices signifies hole storage in the rMLG sheets. Fast programming and clear saturation of the program transients observed with the rMLG CSL memory devices suggest reduced ballistic transport in the plane perpendicular to the graphene. Activation energies for programmed and erased state retention losses are calculated as 1.05 and 1.11 eV, respectively. These observations establish the potential of rMLG sheets as a replacement of conventionally used polycrystalline silicon FG.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2014-10-15T15:42:27Z
2014-10-15T15:42:27Z
2013
 
Type Article
 
Identifier IEEE ELECTRON DEVICE LETTERS, 34(9)1136-1138
http://dx.doi.org/10.1109/LED.2013.2272643
http://dspace.library.iitb.ac.in/jspui/handle/100/15181
 
Language en