Reduced Multilayer Graphene Oxide Floating Gate Flash Memory With Large Memory Window and Robust Retention Characteristics
DSpace at IIT Bombay
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Title |
Reduced Multilayer Graphene Oxide Floating Gate Flash Memory With Large Memory Window and Robust Retention Characteristics
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Creator |
MISHRA, A
JANARDANAN, A KHARE, M KALITA, H KOTTANTHARAYIL, A |
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Subject |
Activation energy
flash memory multilayer graphene program erase transient retention OPERATION |
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Description |
Reduced multilayer graphene (rMLG) is investigated as a charge storage layer (CSL) in conventional floating gate (FG) flash memory structure. A large memory window of 9.4 V at +/- 20-V program/erase and robust 10-years data retention at 150 degrees C is demonstrated. Significant over-erase observed in these memory devices signifies hole storage in the rMLG sheets. Fast programming and clear saturation of the program transients observed with the rMLG CSL memory devices suggest reduced ballistic transport in the plane perpendicular to the graphene. Activation energies for programmed and erased state retention losses are calculated as 1.05 and 1.11 eV, respectively. These observations establish the potential of rMLG sheets as a replacement of conventionally used polycrystalline silicon FG.
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Publisher |
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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Date |
2014-10-15T15:42:27Z
2014-10-15T15:42:27Z 2013 |
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Type |
Article
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Identifier |
IEEE ELECTRON DEVICE LETTERS, 34(9)1136-1138
http://dx.doi.org/10.1109/LED.2013.2272643 http://dspace.library.iitb.ac.in/jspui/handle/100/15181 |
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Language |
en
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