Raman spectroscopy of silicon-nanocrystals fabricated by inductively coupled plasma chemical vapor deposition
DSpace at IIT Bombay
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Title |
Raman spectroscopy of silicon-nanocrystals fabricated by inductively coupled plasma chemical vapor deposition
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Creator |
MAVILLA, NR
SOLANKI, CS VASI, J |
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Subject |
Inductively coupled plasma enhanced CVD
Silicon-nanocrystal Optical phonon confinement SOLAR-CELLS SI/SIO2 SUPERLATTICES LUMINESCENCE EFFICIENCY SIZE CRYSTALLIZATION CONDUCTIVITY NANOCLUSTERS ENHANCEMENT VOLTAGE |
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Description |
Size dependent properties of nanostructures - quantum confinement effect, optical phonon confinement, multiexciton generation - prompted extensive research of good old silicon, at nanoscale dimensions, for potential applications in next generation device applications. However, for realizing functional devices, a thorough understanding of size related properties and a viable fabrication method are crucial. In this study, we present a thorough Raman analysis of silicon-nanocrystals (Si-NCs) of various sizes fabricated by inductively coupled plasma enhanced CVD (ICPCVD). Si-NCs were realized using a two-step process for tight size control; initially alternating multilayers of SiOx < 2 (SRO) and SiO2 were deposited by ICPCVD, followed by high temperature annealing for phase-separation and crystallization. To study the optical phonon confinement, a series of five multilayer samples with thickness of SRO sublayer (T-SRO) varying from 10 nm to 2 nm were fabricated. Raman spectra for ML samples with T-SRO >= 6 nm exhibited three notable features; a red-shifted sharp peak compared to c-Si, a broad asymmetric shoulder on the lower frequency side and a grain boundary band related to the interface between Si-NCs and SiO2. These features confirm the formation of Si-NCs in SRO sublayers. ML samples with T-SRO
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Publisher |
ELSEVIER SCIENCE BV
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Date |
2014-10-15T15:53:58Z
2014-10-15T15:53:58Z 2013 |
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Type |
Article
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Identifier |
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 5259-64
1386-9477 1873-1759 http://dx.doi.org/10.1016/j.physe.2013.03.019 http://dspace.library.iitb.ac.in/jspui/handle/100/15204 |
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Language |
en
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