Optical Bandgap Tunability of Silicon Nanocrystals Fabricated by Inductively Coupled Plasma CVD for Next Generation Photovoltaics
DSpace at IIT Bombay
View Archive InfoField | Value | |
Title |
Optical Bandgap Tunability of Silicon Nanocrystals Fabricated by Inductively Coupled Plasma CVD for Next Generation Photovoltaics
|
|
Creator |
MAVILLA, NR
SOLANKI, CS VASI, J |
|
Subject |
Inductively coupled plasma chemical vapor deposition (ICPCVD)
Raman spectroscopy silicon nanocrystal (Si-NCs) tandem solar cell UV-Vis spectroscopy CHEMICAL-VAPOR-DEPOSITION SI/SIO2 SUPERLATTICES PHOTOLUMINESCENCE NITRIDE MATRIX TEMPERATURE EFFICIENCY CELLS |
|
Description |
Superior optical properties of Si-nanocrystals (Si-NCs) compared with bulk Si, particularly tunability of bandgap by controlling size, can be exploited for realizing next-generation Si tandem solar cells. In view of this, optical bandgap tunability of Si-NCs fabricated by Inductively Coupled Plasma Enhanced Chemical Vapor Deposition (ICPCVD) is presented. The SiOx
|
|
Publisher |
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
|
|
Date |
2014-10-15T15:54:28Z
2014-10-15T15:54:28Z 2013 |
|
Type |
Article
|
|
Identifier |
IEEE JOURNAL OF PHOTOVOLTAICS, 3(4)1279-1286
http://dx.doi.org/10.1109/JPHOTOV.2013.2272876 http://dspace.library.iitb.ac.in/jspui/handle/100/15205 |
|
Language |
en
|
|