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Fermi-level unpinning and low resistivity in contacts to n-type Ge with a thin ZnO interfacial layer

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Title Fermi-level unpinning and low resistivity in contacts to n-type Ge with a thin ZnO interfacial layer
 
Creator MANIK, PP
MISHRA, RK
KISHORE, VP
RAY, P
NAINANI, A
HUANG, YC
ABRAHAM, MC
GANGULY, U
LODHATA, S
 
Description We report low resistance Ohmic contacts on n-Ge using a thin ZnO interfacial layer (IL) capped with Ti. A 350 degrees C post metallization anneal is used to create oxygen vacancies that dope ZnO heavily n-type (n(+)). Rectifying Ti/n-Ge contacts become Ohmic with 1000x higher reverse current density after insertion of n(+)-ZnO IL. Specific resistivity of similar to 1.4 x 10(-7) Omega cm(2) is demonstrated on epitaxial n(+)-Ge (2.5 x 10(19) cm(-3)) layers. Low resistance with ZnO IL can be attributed to (a) low barrier height from Fermi-level unpinning, (b) good conduction band alignment between ZnO and Ge, and (c) thin tunneling barrier due to the n(+) doping. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4764909]
 
Publisher AMER INST PHYSICS
 
Date 2014-10-15T16:43:12Z
2014-10-15T16:43:12Z
2012
 
Type Article
 
Identifier APPLIED PHYSICS LETTERS, 101(18)
http://dx.doi.org/10.1063/1.4764909
http://dspace.library.iitb.ac.in/jspui/handle/100/15239
 
Language en