On Pairing of Bipolar RRAM Memory With NPN Selector Based on Set/Reset Array Power Considerations
DSpace at IIT Bombay
View Archive InfoField | Value | |
Title |
On Pairing of Bipolar RRAM Memory With NPN Selector Based on Set/Reset Array Power Considerations
|
|
Creator |
MANDAPATI, R
BORKAR, A SRINIVASAN, VSS BAFNA, P KARKARE, P LODHA, S RAJENDRAN, B GANGULY, U |
|
Subject |
Bipolar resistive RAM (RRAM)
cross-point memory array compact circuit model NPN selector punch-through bipolar selector device resistance ratio DEVICE PERFORMANCE |
|
Description |
In this paper, we present a methodology of choosing an NPN selector (1S) for a given memory element (1M) to form a cross point (consisting of the memory element in series with the selector-1S1M) based on the overall array power efficiency requirements. This methodology is based on extensive TCAD simulations that show excellent match with our experimentally demonstrated n+/p/n+ epitaxial Si punch-through diode as selector (NPN selector) for symmetric bipolar resistive RAM. Using a TCAD validated circuit model of the NPN selector, we derive an equivalent circuit model for the cross point. For an exemplary selector design, our model suggests that the power P-xp dissipated in the cross point during set operation obeys the relationship P-xp proportional to(VsetIset1.25)-I-0.5, even though the power dissipated in the memory element P-memory is VsetIset. This shows that lowering the set current I-set of the memory element leads to a larger reduction in array power than lowering the set voltage V-set.
|
|
Publisher |
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
|
|
Date |
2014-10-15T16:45:42Z
2014-10-15T16:45:42Z 2013 |
|
Type |
Article
|
|
Identifier |
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 12(6)1178-1184
1536-125X 1941-0085 http://dx.doi.org/10.1109/TNANO.2013.2284508 http://dspace.library.iitb.ac.in/jspui/handle/100/15244 |
|
Language |
en
|
|