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On Pairing of Bipolar RRAM Memory With NPN Selector Based on Set/Reset Array Power Considerations

DSpace at IIT Bombay

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Title On Pairing of Bipolar RRAM Memory With NPN Selector Based on Set/Reset Array Power Considerations
 
Creator MANDAPATI, R
BORKAR, A
SRINIVASAN, VSS
BAFNA, P
KARKARE, P
LODHA, S
RAJENDRAN, B
GANGULY, U
 
Subject Bipolar resistive RAM (RRAM)
cross-point memory array
compact circuit model
NPN selector
punch-through bipolar selector device
resistance ratio
DEVICE
PERFORMANCE
 
Description In this paper, we present a methodology of choosing an NPN selector (1S) for a given memory element (1M) to form a cross point (consisting of the memory element in series with the selector-1S1M) based on the overall array power efficiency requirements. This methodology is based on extensive TCAD simulations that show excellent match with our experimentally demonstrated n+/p/n+ epitaxial Si punch-through diode as selector (NPN selector) for symmetric bipolar resistive RAM. Using a TCAD validated circuit model of the NPN selector, we derive an equivalent circuit model for the cross point. For an exemplary selector design, our model suggests that the power P-xp dissipated in the cross point during set operation obeys the relationship P-xp proportional to(VsetIset1.25)-I-0.5, even though the power dissipated in the memory element P-memory is VsetIset. This shows that lowering the set current I-set of the memory element leads to a larger reduction in array power than lowering the set voltage V-set.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2014-10-15T16:45:42Z
2014-10-15T16:45:42Z
2013
 
Type Article
 
Identifier IEEE TRANSACTIONS ON NANOTECHNOLOGY, 12(6)1178-1184
1536-125X
1941-0085
http://dx.doi.org/10.1109/TNANO.2013.2284508
http://dspace.library.iitb.ac.in/jspui/handle/100/15244
 
Language en