The impact of monolayer coverage, barrier thickness and growth rate on the thermal stability of photoluminescence of coupled InAs/GaAs quantum dot hetero-structure with quaternary capping of InAlGaAs
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Title |
The impact of monolayer coverage, barrier thickness and growth rate on the thermal stability of photoluminescence of coupled InAs/GaAs quantum dot hetero-structure with quaternary capping of InAlGaAs
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Creator |
MANDAL, A
VERMA, U HALDER, N CHAKRABARTI, S |
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Subject |
Semiconductors
Epitaxial growth Electron microscopy Optical properties INFRARED PHOTODETECTOR GAAS TEMPERATURE OPERATION DENSITY |
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Description |
The self-assembled InAs/GaAs MQDs are widely investigated for their potential application in optoelectronic devices like lasers and photovoltaics. We have explored the effect of QD growth rate and structural parameters like capping layer thickness on the morphology and optical properties of the MQD heterostructures overgrown with a combination capping of InAlGaAs and GaAs. The growth rate of the seed layers in the MQD samples is also varied to investigate its effect in the vertical stacking of the islands. The change in the morphology and the optical properties of the samples due to variation in growth and structural parameters are explained by the presence of strain in the QD structures, which arises due to lattice mismatch. (C) 2012 Elsevier Ltd. All rights reserved.
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Publisher |
PERGAMON-ELSEVIER SCIENCE LTD
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Date |
2014-10-15T16:53:43Z
2014-10-15T16:53:43Z 2012 |
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Type |
Article
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Identifier |
MATERIALS RESEARCH BULLETIN, 47(3)551-556
http://dx.doi.org/10.1016/j.materresbull.2011.12.047 http://dspace.library.iitb.ac.in/jspui/handle/100/15260 |
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Language |
en
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