Record Details

The impact of monolayer coverage, barrier thickness and growth rate on the thermal stability of photoluminescence of coupled InAs/GaAs quantum dot hetero-structure with quaternary capping of InAlGaAs

DSpace at IIT Bombay

View Archive Info
 
 
Field Value
 
Title The impact of monolayer coverage, barrier thickness and growth rate on the thermal stability of photoluminescence of coupled InAs/GaAs quantum dot hetero-structure with quaternary capping of InAlGaAs
 
Creator MANDAL, A
VERMA, U
HALDER, N
CHAKRABARTI, S
 
Subject Semiconductors
Epitaxial growth
Electron microscopy
Optical properties
INFRARED PHOTODETECTOR
GAAS
TEMPERATURE
OPERATION
DENSITY
 
Description The self-assembled InAs/GaAs MQDs are widely investigated for their potential application in optoelectronic devices like lasers and photovoltaics. We have explored the effect of QD growth rate and structural parameters like capping layer thickness on the morphology and optical properties of the MQD heterostructures overgrown with a combination capping of InAlGaAs and GaAs. The growth rate of the seed layers in the MQD samples is also varied to investigate its effect in the vertical stacking of the islands. The change in the morphology and the optical properties of the samples due to variation in growth and structural parameters are explained by the presence of strain in the QD structures, which arises due to lattice mismatch. (C) 2012 Elsevier Ltd. All rights reserved.
 
Publisher PERGAMON-ELSEVIER SCIENCE LTD
 
Date 2014-10-15T16:53:43Z
2014-10-15T16:53:43Z
2012
 
Type Article
 
Identifier MATERIALS RESEARCH BULLETIN, 47(3)551-556
http://dx.doi.org/10.1016/j.materresbull.2011.12.047
http://dspace.library.iitb.ac.in/jspui/handle/100/15260
 
Language en