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Proposed mechanism to represent the suppression of dark current density by four orders with low energy light ion (H-) implantation in quaternary alloy-capped InAs/GaAs quantum dot infrared photodetectors

DSpace at IIT Bombay

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Title Proposed mechanism to represent the suppression of dark current density by four orders with low energy light ion (H-) implantation in quaternary alloy-capped InAs/GaAs quantum dot infrared photodetectors
 
Creator MANDAL, A
GHADI, H
MATHUR, KL
BASU, A
SUBRAHMANYAM, NBV
SINGH, P
CHAKRABARTI, S
 
Subject Semiconductors
Epitaxial growth
Atomic force microscopy
Optical properties
Electrical properties
GAAS
WAVELENGTH
 
Description Here we propose a carrier transport mechanism for low energy H- ions implanted InAs/GaAs quantum dot infrared photodetectors supportive of the experimental results obtained. Dark current density suppression of up to four orders was observed in the implanted quantum dot infrared photodetectors, which further demonstrates that they are effectively operational. We concentrated on determining how defect-related material and structural changes attributed to implantation helped in dark current density reduction for InAs/GaAs quantum dot infrared photodetectors. This is the first study to report the electrical carrier transport mechanism of H- ion-implanted InAs/GaAs quantum dot infrared photodetectors. (C) 2013 Elsevier Ltd. All rights reserved.
 
Publisher PERGAMON-ELSEVIER SCIENCE LTD
 
Date 2014-10-15T16:55:14Z
2014-10-15T16:55:14Z
2013
 
Type Article
 
Identifier MATERIALS RESEARCH BULLETIN, 48(8)2886-2891
http://dx.doi.org/10.1016/j.materresbull.2013.04.007
http://dspace.library.iitb.ac.in/jspui/handle/100/15263
 
Language en