Proposed mechanism to represent the suppression of dark current density by four orders with low energy light ion (H-) implantation in quaternary alloy-capped InAs/GaAs quantum dot infrared photodetectors
DSpace at IIT Bombay
View Archive InfoField | Value | |
Title |
Proposed mechanism to represent the suppression of dark current density by four orders with low energy light ion (H-) implantation in quaternary alloy-capped InAs/GaAs quantum dot infrared photodetectors
|
|
Creator |
MANDAL, A
GHADI, H MATHUR, KL BASU, A SUBRAHMANYAM, NBV SINGH, P CHAKRABARTI, S |
|
Subject |
Semiconductors
Epitaxial growth Atomic force microscopy Optical properties Electrical properties GAAS WAVELENGTH |
|
Description |
Here we propose a carrier transport mechanism for low energy H- ions implanted InAs/GaAs quantum dot infrared photodetectors supportive of the experimental results obtained. Dark current density suppression of up to four orders was observed in the implanted quantum dot infrared photodetectors, which further demonstrates that they are effectively operational. We concentrated on determining how defect-related material and structural changes attributed to implantation helped in dark current density reduction for InAs/GaAs quantum dot infrared photodetectors. This is the first study to report the electrical carrier transport mechanism of H- ion-implanted InAs/GaAs quantum dot infrared photodetectors. (C) 2013 Elsevier Ltd. All rights reserved.
|
|
Publisher |
PERGAMON-ELSEVIER SCIENCE LTD
|
|
Date |
2014-10-15T16:55:14Z
2014-10-15T16:55:14Z 2013 |
|
Type |
Article
|
|
Identifier |
MATERIALS RESEARCH BULLETIN, 48(8)2886-2891
http://dx.doi.org/10.1016/j.materresbull.2013.04.007 http://dspace.library.iitb.ac.in/jspui/handle/100/15263 |
|
Language |
en
|
|