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More than one order enhancement in peak detectivity (D*) for quantum dot infrared photodetectors implanted with low energy light ions (H-)

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Title More than one order enhancement in peak detectivity (D*) for quantum dot infrared photodetectors implanted with low energy light ions (H-)
 
Creator MANDAL, A
AGARWAL, A
GHADI, H
KUMARI, KCG
BASU, A
SUBRAHMANYAM, NBV
SINGH, P
CHAKRABARTI, S
 
Subject DEVICE CHARACTERISTICS
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Description In(Ga)As/GaAs-based quantum dot infrared photodetectors (QDIPs) have emerged as one of the most suitable devices for infrared detection. However, quantum dot devices suffer from lower efficiencies due to a low fill-factor (similar to 20%-25%) of dots. Here, we report a post-growth technique for improving the QDIP performance using low energy light ion (H-) implantation. At high bias, there is evidence of suppression in the field-assisted tunneling component of the dark current. Enhancement in peak detectivity (D*), a measure of the signal-to-noise ratio, by more than one order, from similar to 10(9) to 2.44 x 10(10) cm Hz(1/2)/W was obtained from the implanted devices. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4791675]
 
Publisher AMER INST PHYSICS
 
Date 2014-10-15T16:55:44Z
2014-10-15T16:55:44Z
2013
 
Type Article
 
Identifier APPLIED PHYSICS LETTERS, 102(5)
http://dx.doi.org/10.1063/1.4791675
http://dspace.library.iitb.ac.in/jspui/handle/100/15264
 
Language en