More than one order enhancement in peak detectivity (D*) for quantum dot infrared photodetectors implanted with low energy light ions (H-)
DSpace at IIT Bombay
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Title |
More than one order enhancement in peak detectivity (D*) for quantum dot infrared photodetectors implanted with low energy light ions (H-)
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Creator |
MANDAL, A
AGARWAL, A GHADI, H KUMARI, KCG BASU, A SUBRAHMANYAM, NBV SINGH, P CHAKRABARTI, S |
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Subject |
DEVICE CHARACTERISTICS
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Description |
In(Ga)As/GaAs-based quantum dot infrared photodetectors (QDIPs) have emerged as one of the most suitable devices for infrared detection. However, quantum dot devices suffer from lower efficiencies due to a low fill-factor (similar to 20%-25%) of dots. Here, we report a post-growth technique for improving the QDIP performance using low energy light ion (H-) implantation. At high bias, there is evidence of suppression in the field-assisted tunneling component of the dark current. Enhancement in peak detectivity (D*), a measure of the signal-to-noise ratio, by more than one order, from similar to 10(9) to 2.44 x 10(10) cm Hz(1/2)/W was obtained from the implanted devices. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4791675]
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Publisher |
AMER INST PHYSICS
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Date |
2014-10-15T16:55:44Z
2014-10-15T16:55:44Z 2013 |
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Type |
Article
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Identifier |
APPLIED PHYSICS LETTERS, 102(5)
http://dx.doi.org/10.1063/1.4791675 http://dspace.library.iitb.ac.in/jspui/handle/100/15264 |
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Language |
en
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