Temperature dependent photoluminescence investigation of the effect of growth pause induced ripening in InAs/GaAs quantum dot heterostructures
DSpace at IIT Bombay
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Title |
Temperature dependent photoluminescence investigation of the effect of growth pause induced ripening in InAs/GaAs quantum dot heterostructures
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Creator |
MAKHIJANI, RM
HALDER, N SENGUPTA, S CHAKRABARTI, S |
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Subject |
Semiconductors
Epitaxial growth Electron microscopy Optical properties MOLECULAR-BEAM EPITAXY OPTICAL-PROPERTIES SURFACE SEGREGATION EVOLUTION GAAS(001) ISLANDS BARRIER LAYER WELLS SHAPE |
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Description |
Self-assembled InAs/CaAs quantum dot (QD) heterostructures grown by solid state molecular beam epitaxy (MBE) were subjected to growth ripening pause of comparatively shorter durations (0-50 s) at the growth temperature (520 degrees C). The islands are found to increase in size with the growth pause and correspondingly their density decreases. Though the photoluminescence spectra of the islands subjected to growth pause is found to follow conventional QD systems, a contradiction is noticed in the calculated values of the activation energy of the dots. We ascribed this contradiction due to the poor crystalline quality of the ripened QDs as a result of desorption and sublimation of indium during the pause at high growth temperature. (C) 2011 Elsevier Ltd. All rights reserved.
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Publisher |
PERGAMON-ELSEVIER SCIENCE LTD
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Date |
2014-10-15T16:58:44Z
2014-10-15T16:58:44Z 2012 |
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Type |
Article
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Identifier |
MATERIALS RESEARCH BULLETIN, 47(3)820-825
http://dx.doi.org/10.1016/j.materresbull.2011.11.059 http://dspace.library.iitb.ac.in/jspui/handle/100/15270 |
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Language |
en
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