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Temperature dependent photoluminescence investigation of the effect of growth pause induced ripening in InAs/GaAs quantum dot heterostructures

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Title Temperature dependent photoluminescence investigation of the effect of growth pause induced ripening in InAs/GaAs quantum dot heterostructures
 
Creator MAKHIJANI, RM
HALDER, N
SENGUPTA, S
CHAKRABARTI, S
 
Subject Semiconductors
Epitaxial growth
Electron microscopy
Optical properties
MOLECULAR-BEAM EPITAXY
OPTICAL-PROPERTIES
SURFACE SEGREGATION
EVOLUTION
GAAS(001)
ISLANDS
BARRIER
LAYER
WELLS
SHAPE
 
Description Self-assembled InAs/CaAs quantum dot (QD) heterostructures grown by solid state molecular beam epitaxy (MBE) were subjected to growth ripening pause of comparatively shorter durations (0-50 s) at the growth temperature (520 degrees C). The islands are found to increase in size with the growth pause and correspondingly their density decreases. Though the photoluminescence spectra of the islands subjected to growth pause is found to follow conventional QD systems, a contradiction is noticed in the calculated values of the activation energy of the dots. We ascribed this contradiction due to the poor crystalline quality of the ripened QDs as a result of desorption and sublimation of indium during the pause at high growth temperature. (C) 2011 Elsevier Ltd. All rights reserved.
 
Publisher PERGAMON-ELSEVIER SCIENCE LTD
 
Date 2014-10-15T16:58:44Z
2014-10-15T16:58:44Z
2012
 
Type Article
 
Identifier MATERIALS RESEARCH BULLETIN, 47(3)820-825
http://dx.doi.org/10.1016/j.materresbull.2011.11.059
http://dspace.library.iitb.ac.in/jspui/handle/100/15270
 
Language en