Ultra-shallow quantum dots in an undoped GaAs/AlGaAs two-dimensional electron gas
DSpace at IIT Bombay
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Title |
Ultra-shallow quantum dots in an undoped GaAs/AlGaAs two-dimensional electron gas
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Creator |
MAK, WY
SFIGAKIS, F GUPTA, KD KLOCHAN, O BEERE, HE FARRER, I GRIFFITHS, JP JONES, GAC HAMILTON, AR RITCHIE, DA |
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Subject |
COULOMB-BLOCKADE
TRANSPORT HETEROSTRUCTURES TRANSISTOR DENSITY |
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Description |
We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Due to the absence of dopants, an improvement of more than one order of magnitude in mobility (at 2 x 10(11) cm(-2)) with respect to doped heterostructures with similar depths is observed. These undoped wafers can easily be gated with surface metallic gates patterned by e-beam lithography, as demonstrated here from single-level transport through a quantum dot showing large charging energies (up to 1.75 meV) and excited state energies (up to 0.5 meV). (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4795613]
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Publisher |
AMER INST PHYSICS
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Date |
2014-10-15T16:59:44Z
2014-10-15T16:59:44Z 2013 |
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Type |
Article
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Identifier |
APPLIED PHYSICS LETTERS, 102(10)
http://dx.doi.org/10.1063/1.4795613 http://dspace.library.iitb.ac.in/jspui/handle/100/15272 |
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Language |
en
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