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Ultra-shallow quantum dots in an undoped GaAs/AlGaAs two-dimensional electron gas

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Title Ultra-shallow quantum dots in an undoped GaAs/AlGaAs two-dimensional electron gas
 
Creator MAK, WY
SFIGAKIS, F
GUPTA, KD
KLOCHAN, O
BEERE, HE
FARRER, I
GRIFFITHS, JP
JONES, GAC
HAMILTON, AR
RITCHIE, DA
 
Subject COULOMB-BLOCKADE
TRANSPORT
HETEROSTRUCTURES
TRANSISTOR
DENSITY
 
Description We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Due to the absence of dopants, an improvement of more than one order of magnitude in mobility (at 2 x 10(11) cm(-2)) with respect to doped heterostructures with similar depths is observed. These undoped wafers can easily be gated with surface metallic gates patterned by e-beam lithography, as demonstrated here from single-level transport through a quantum dot showing large charging energies (up to 1.75 meV) and excited state energies (up to 0.5 meV). (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4795613]
 
Publisher AMER INST PHYSICS
 
Date 2014-10-15T16:59:44Z
2014-10-15T16:59:44Z
2013
 
Type Article
 
Identifier APPLIED PHYSICS LETTERS, 102(10)
http://dx.doi.org/10.1063/1.4795613
http://dspace.library.iitb.ac.in/jspui/handle/100/15272
 
Language en