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Understanding Process Impact of Hole Traps and NBTI in HKMG p-MOSFETs Using Measurements and Atomistic Simulations

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Title Understanding Process Impact of Hole Traps and NBTI in HKMG p-MOSFETs Using Measurements and Atomistic Simulations
 
Creator MAHAPATRA, S
DE, S
JOSHI, K
MUKHOPADHYAY, S
PANDEY, RK
MURALI, KVRM
 
Subject Angle-resolved X-ray photoelectron spectroscopy (ARXPS)
Chem-Ox IL
DCIV
DFT simulations
flicker noise
high-k metal gate (HKMG)
hole traps
Negative bias temperature instability (NBTI)
thermal Interlayer (IL)
trap generation
V-T shift
SION
 
Description The impact of the gate insulator process on interlayer (IL) hole traps in IL/high-K dual-layer p-MOSFET gate-stack is studied by physical and electrical measurements along with atomistic simulations. Processes that lead to higher concentrations of Hf and N in IL, measured by angle-resolved X-ray photoelectron spectroscopy, result in higher IL hole traps measured by flicker noise in prestress and verified by atomistic simulations. The influence of these process induced preexisting IL hole traps on parametric degradation of p-MOSFETs during Negative bias temperature instability (NBTI) stress is studied. The mechanism responsible for superior NBTI of thermal IL stack, having lower Hf and N content in the IL as compared with Chem-Ox IL stack, is explained.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2014-10-15T17:06:45Z
2014-10-15T17:06:45Z
2013
 
Type Article
 
Identifier IEEE ELECTRON DEVICE LETTERS, 34(8)963-965
http://dx.doi.org/10.1109/LED.2013.2270003
http://dspace.library.iitb.ac.in/jspui/handle/100/15286
 
Language en