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Hydrogen-incorporated ZnO nanowire films: stable and high electrical conductivity

DSpace at IIT Bombay

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Title Hydrogen-incorporated ZnO nanowire films: stable and high electrical conductivity
 
Creator KUSHWAHA, A
ASLAM, M
 
Subject ROOM-TEMPERATURE
SOLAR-CELLS
OXIDE-FILMS
ZINC-OXIDE
NANORODS
DEPOSITION
DEFECTS
DONOR
 
Description Post-growth hydrogen annealing treatment of highly oriented ZnO nanowire (NW) films (ZnO : H) results in high electrical conductivity (3.7 x 10(3) S m(-1)) and fully suppressed defect emission at room temperature. The formation of hydrogen-related vacancy complexes is responsible for the suppression of vacancies (V-o(+) and V-o(2+)), leading to a reduction in defect-based emission. ZnO : H NW films show five orders larger stable electrical conductance with a four-fold increment in carrier mobility (7-28 cm(2) V-1 s(-1)). As compared with pristine NWs, the carrier concentration in ZnO : H NW films increases from 10(15) to 10(19) cm(-3), which is in the range of commercial transparent conducting oxides. X-ray photoelectron spectroscopy and secondary ion mass spectrometry analyses reveal stable OH bond formation, which strongly supports the prediction of H doping. These films offer a promising conducting oxide platform for photovoltaic applications.
 
Publisher IOP PUBLISHING LTD
 
Date 2014-10-16T05:24:04Z
2014-10-16T05:24:04Z
2013
 
Type Article
 
Identifier JOURNAL OF PHYSICS D-APPLIED PHYSICS, 46(48)
0022-3727
1361-6463
http://dx.doi.org/10.1088/0022-3727/46/48/485104
http://dspace.library.iitb.ac.in/jspui/handle/100/15328
 
Language en