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GaAs metal-oxide-semiconductor based nonvolatile memory devices embedded with ZnO quantum dots

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Title GaAs metal-oxide-semiconductor based nonvolatile memory devices embedded with ZnO quantum dots
 
Creator KUNDU, S
GOLLU, SR
SHARMA, R
HALDER, NN
BISWAS, P
BANERJI, P
GUPTA, D
 
Subject CHARGE STORAGE
LAYER
SILICON
NANOCRYSTALS
PASSIVATION
CAPACITORS
DEPOSITION
SURFACES
 
Description Ultrathin InP passivated GaAs non-volatile memory devices were fabricated with chemically synthesized 5 nm ZnO quantum dots embedded into ZrO2 high-k oxide matrix deposited through metal organic chemical vapor deposition. In these memory devices, the memory window was found to be 6.10V and the obtained charge loss was only 15.20% after 10(5) s. The superior retention characteristics and a wide memory window are achieved due to presence of ZnO quantum dots between tunneling and control oxide layers. Room temperature Coulomb blockade effect was found in these devices and it was ascertained to be the main reason for low leakage. Electronic band diagram with program and erase operations were described on the basis of electrical characterizations. (C) 2013 AIP Publishing LLC.
 
Publisher AMER INST PHYSICS
 
Date 2014-10-16T05:28:05Z
2014-10-16T05:28:05Z
2013
 
Type Article
 
Identifier JOURNAL OF APPLIED PHYSICS, 114(8)
http://dx.doi.org/10.1063/1.4819404
http://dspace.library.iitb.ac.in/jspui/handle/100/15336
 
Language en