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Radio-frequency amplification property of the MgO-based magnetic tunnel junction using field-induced ferromagnetic resonance

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Title Radio-frequency amplification property of the MgO-based magnetic tunnel junction using field-induced ferromagnetic resonance
 
Creator KONISHI, K
DIXIT, DK
TULAPURKAR, AA
MIWA, S
NOZAKI, T
KUBOTA, H
FUKUSHIMA, A
YUASA, S
SUZUKI, Y
 
Subject ROOM-TEMPERATURE
MAGNETORESISTANCE
EMISSION
 
Description The radio-frequency (RF) voltage amplification property of a tunnel magnetoresistance device driven by an RF external-magnetic-field-induced ferromagnetic resonance was studied. The proposed device consists of a magnetic tunnel junction and an electrically isolated coplanar waveguide. The input RF voltage applied to the waveguide can excite the resonant dynamics in the free layer magnetization, leading to the generation of an output RF voltage under a DC bias current. The dependences of the RF voltage gain on the static external magnetic field strength and angle were systematically investigated. The design principles for the enhancement of the gain factor are also discussed. (C) 2013 AIP Publishing LLC [http://dx.doi.org/10.1063/1.4803050]
 
Publisher AMER INST PHYSICS
 
Date 2014-10-16T06:23:07Z
2014-10-16T06:23:07Z
2013
 
Type Article
 
Identifier APPLIED PHYSICS LETTERS, 102(16)
http://dx.doi.org/10.1063/1.4803050
http://dspace.library.iitb.ac.in/jspui/handle/100/15423
 
Language en