Multi-stack InAs/InGaAs sub-monolayer quantum dots infrared photodetectors
DSpace at IIT Bombay
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Title |
Multi-stack InAs/InGaAs sub-monolayer quantum dots infrared photodetectors
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Creator |
KIM, JO
SENGUPTA, S BARVE, AV SHARMA, YD ADHIKARY, S LEE, SJ NOH, SK ALLEN, MS ALLEN, JW CHAKRABARTI, S KRISHNA, S |
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Subject |
EPITAXY
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Description |
We report on the design and performance of multi-stack InAs/InGaAs sub-monolayer (SML) quantum dots (QD) based infrared photodetectors (SML-QDIP). SML-QDIPs are grown with the number of stacks varied from 2 to 6. From detailed radiometric characterization, it is determined that the sample with 4 SML stacks has the best performance. The s-to-p (s/p) polarized spectral response ratio of this device is measured to be 21.7%, which is significantly higher than conventional Stranski-Krastanov quantum dots (similar to 13%) and quantum wells (similar to 2.8%). This result makes the SML-QDIP an attractive candidate in applications that require normal incidence. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4774383]
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Publisher |
AMER INST PHYSICS
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Date |
2014-10-16T06:28:38Z
2014-10-16T06:28:38Z 2013 |
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Type |
Article
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Identifier |
APPLIED PHYSICS LETTERS, 102(1)
http://dx.doi.org/10.1063/1.4774383 http://dspace.library.iitb.ac.in/jspui/handle/100/15434 |
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Language |
en
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