Record Details

Fabrication of Unipolar Graphene Field-Effect Transistors by Modifying Source and Drain Electrode Interfaces with Zinc Porphyrin

DSpace at IIT Bombay

View Archive Info
 
 
Field Value
 
Title Fabrication of Unipolar Graphene Field-Effect Transistors by Modifying Source and Drain Electrode Interfaces with Zinc Porphyrin
 
Creator KHADERBAD, MA
TJOA, V
RAO, M
PHANDRIPANDE, R
MADHU, S
WEI, J
RAVIKANTH, M
MATHEWS, N
MHAISALKAR, SG
RAO, VR
 
Subject graphene
transistor
unipolar
self-assembled monolayer
injection barrier
SELF-ASSEMBLED MONOLAYERS
CHARGE-CARRIER INJECTION
POLYMER SOLAR-CELLS
OXIDE ELECTRODES
METAL
HETEROJUNCTION
TRANSPORT
DIPOLES
DEVICES
ANALOGS
 
Description We report a unipolar operation in reduced graphene oxide (RGO) field-effect transistors (FETs) via modification of the source/drain (S/D) electrode interfaces with self-assembled monolayers (SAMs) of 5-(4-hydroxyphenyl)-10,15,20-tri-(p-tolyl) zinc(II) porphyrin (Zn(II)TTPOH) molecules. The dipolar Zn(II)TTPOH molecules at the RGO/platinum (Pt) S/D interface results in an increase of the electron injection barrier and a reduction of the hole-injection barrier. Using dipole measurements from Kelvin probe force microscopy and highest occupied molecular orbital lowest unoccupied molecular orbital (HOMO-LUMO) calculations from cyclic voltammetry, the electron and hole injection barriers were calculated to be 2.2 and 0.11 eV, respectively, indicating a higher barrier for electrons, compared to that of holes. A reduced gate modulation in the electron accumulation regime in RGO devices with SAM shows that unipolar RGO FETs can be attained using a low-cost, solution-processable fabrication technique.
 
Publisher AMER CHEMICAL SOC
 
Date 2014-10-16T06:40:39Z
2014-10-16T06:40:39Z
2012
 
Type Article
 
Identifier ACS APPLIED MATERIALS & INTERFACES, 4(3)1434-1439
http://dx.doi.org/10.1021/am201691s
http://dspace.library.iitb.ac.in/jspui/handle/100/15458
 
Language en