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Porphyrin Self-Assembled Monolayer as a Copper Diffusion Barrier for Advanced CMOS Technologies

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Title Porphyrin Self-Assembled Monolayer as a Copper Diffusion Barrier for Advanced CMOS Technologies
 
Creator KHADERBAD, MA
PANDHARIPANDE, R
SINGH, V
MADHU, S
RAVIKANTH, M
RAO, VR
 
Subject Copper interconnect
diffusion barrier
low-k interlayer dielectric (ILD)
porphyrin
self-assembled monolayer (SAM)
LOW-K DIELECTRICS
THIN-FILMS
CU METALLIZATION
PERFORMANCE
THICKNESS
SURFACES
ADHESION
ZINC
 
Description This paper investigates properties of zinc porphyrin self-assembled monolayer (SAM) as a Cu diffusion barrier for advanced back-end complementary metal-oxide-semiconductor technologies. The SAM layers are integrated with various interlayer dielectrics (ILDs) such as HSQ and black diamond (BD). Monolayer formation on ILDs was studied using X-ray photoelectron spectroscopy, atomic force microscopy, contact angle, FTIR, and UV-Vis techniques. Degradation study of the Cu/ILD and Cu/SAM/ILD systems was performed using stress-induced CV and IV at elevated temperatures. Time-of-flight secondary ion mass spectrometry was employed to establish effectiveness of these films as Cu diffusion barriers. The results indicate that SAM films, in addition to improving the ILD's moisture resistance, may help in thinning down the existing barrier layer thickness on the low-k porous ILDs. Effect of SAM layers on the mechanical properties of BD film was studied using nanoindentation.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2014-10-16T06:42:39Z
2014-10-16T06:42:39Z
2012
 
Type Article
 
Identifier IEEE TRANSACTIONS ON ELECTRON DEVICES, 59(7)1963-1969
http://dx.doi.org/10.1109/TED.2012.2195184
http://dspace.library.iitb.ac.in/jspui/handle/100/15462
 
Language en