Nanostructured Bilayer Anodic TiO2/Al2O3 Metal-Insulator-Metal Capacitor
DSpace at IIT Bombay
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Title |
Nanostructured Bilayer Anodic TiO2/Al2O3 Metal-Insulator-Metal Capacitor
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Creator |
KARTHIK, R
KANNADASSAN, D BAGHINI, MS MALLICK, PS |
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Subject |
Metal-Insulator-Metal Capacitor
Anodization Leakage Mechanisms Bilayer Crystalline Properties MIM CAPACITORS OXIDE-FILMS ALUMINUM VOLTAGE |
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Description |
This paper presents the fabrication of high performance bilayer TiO2/Al2O3 Metal-Insulator-Metal capacitor using anodization technique. A high capacitance density of 7 fF/mu m(2), low quadratic voltage coefficient of capacitance of 150 ppm/V-2 and a low leakage current density of 9.1 nA/cm(2) at 3 V are achieved which are suitable for Analog and Mixed signal applications. The influence of anodization voltage on structural and electrical properties of dielectric stack is studied in detail. At higher anodization voltages, we have observed the transformation of amorphous to crystalline state of TiO2/Al2O3 and improvement of electrical properties.
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Publisher |
AMER SCIENTIFIC PUBLISHERS
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Date |
2014-10-16T06:53:40Z
2014-10-16T06:53:40Z 2013 |
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Type |
Article
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Identifier |
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 13(10)6894-6899
1533-4880 1533-4899 http://dx.doi.org/10.1166/jnn.2013.7767 http://dspace.library.iitb.ac.in/jspui/handle/100/15484 |
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Language |
en
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