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Nanostructured Bilayer Anodic TiO2/Al2O3 Metal-Insulator-Metal Capacitor

DSpace at IIT Bombay

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Title Nanostructured Bilayer Anodic TiO2/Al2O3 Metal-Insulator-Metal Capacitor
 
Creator KARTHIK, R
KANNADASSAN, D
BAGHINI, MS
MALLICK, PS
 
Subject Metal-Insulator-Metal Capacitor
Anodization
Leakage Mechanisms
Bilayer
Crystalline Properties
MIM CAPACITORS
OXIDE-FILMS
ALUMINUM
VOLTAGE
 
Description This paper presents the fabrication of high performance bilayer TiO2/Al2O3 Metal-Insulator-Metal capacitor using anodization technique. A high capacitance density of 7 fF/mu m(2), low quadratic voltage coefficient of capacitance of 150 ppm/V-2 and a low leakage current density of 9.1 nA/cm(2) at 3 V are achieved which are suitable for Analog and Mixed signal applications. The influence of anodization voltage on structural and electrical properties of dielectric stack is studied in detail. At higher anodization voltages, we have observed the transformation of amorphous to crystalline state of TiO2/Al2O3 and improvement of electrical properties.
 
Publisher AMER SCIENTIFIC PUBLISHERS
 
Date 2014-10-16T06:53:40Z
2014-10-16T06:53:40Z
2013
 
Type Article
 
Identifier JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 13(10)6894-6899
1533-4880
1533-4899
http://dx.doi.org/10.1166/jnn.2013.7767
http://dspace.library.iitb.ac.in/jspui/handle/100/15484
 
Language en