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Nanostructured Barrier Type Anodic Oxide Metal-Insulator-Metal Capacitors

DSpace at IIT Bombay

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Title Nanostructured Barrier Type Anodic Oxide Metal-Insulator-Metal Capacitors
 
Creator KANNADASSAN, D
KARTHIK, R
BHAGINI, MS
MALLICK, PS
 
Subject MIM Capacitor
Anodization
High-k
Frequency Dependant Capacitance
Dielectric Polarization
DENSITY MIM CAPACITORS
ALUMINUM-OXIDE
FILMS
POLARIZATION
DIELECTRICS
 
Description In this paper, we have presented a detailed study of electrical properties and fabrication of Metal-Insulator-Metal capacitor using anodization. Anodization is regarded as a potential fabrication process for the preparation of high quality metal-insulator-metal capacitors to meet the requirements of International Technology Roadmap for Semiconductors 2012 predicted for Mixed Signal/RF technologies. With high capacitance density of 6.01 fF/mu m(2) and low voltage coefficient of capacitance less than 500 ppmN, anodic oxide MIM capacitor shows that the capacitance varies by less than 6% in the frequency range of 1 KHz to 1 MHz at 3 V and low leakage current density of less than 1 nA/cm(2) at 2 V.
 
Publisher AMER SCIENTIFIC PUBLISHERS
 
Date 2014-10-16T07:00:11Z
2014-10-16T07:00:11Z
2012
 
Type Article
 
Identifier JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 7(4)400-404
http://dx.doi.org/10.1166/jno.2012.1317
http://dspace.library.iitb.ac.in/jspui/handle/100/15497
 
Language en