Record Details

Double-Channel AlGaN/GaN High Electron Mobility Transistor With Back Barriers

DSpace at IIT Bombay

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Title Double-Channel AlGaN/GaN High Electron Mobility Transistor With Back Barriers
 
Creator KAMATH, A
PATIL, T
ADARI, R
BHATTACHARYA, I
GANGULY, S
ALDHAHERI, RW
HUSSAIN, MA
SAHA, D
 
Subject Back barrier
GaN
high electron mobility (HEMT)
two-dimensional electron gas (2DEG)
HEMTS
GHZ
 
Description We have developed a double-channel high electron mobility transistor with back barriers for carrier confinement. We have observed that the double-channel devices may suffer from the lack of gate control particularly for the lower channel. However, the problem can be contained by using a suitable back barrier for the lower channel. The double-channel back-barrier devices show good current gain and power gain cutoff frequencies. These devices can be operated with excellent gain linearity up to a larger value for input power and frequency.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2014-10-16T07:05:12Z
2014-10-16T07:05:12Z
2012
 
Type Article
 
Identifier IEEE ELECTRON DEVICE LETTERS, 33(12)1690-1692
http://dx.doi.org/10.1109/LED.2012.2218272
http://dspace.library.iitb.ac.in/jspui/handle/100/15507
 
Language en