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Contact resistivity reduction through interfacial layer doping in metal-interfacial layer-semiconductor contacts

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Title Contact resistivity reduction through interfacial layer doping in metal-interfacial layer-semiconductor contacts
 
Creator GUPTA, S
MANIK, PP
MISHRA, RK
NAINANI, A
ABRAHAM, MC
LODHA, S
 
Subject MODEL
 
Description Metal-induced-gap-states model for Fermi-level pinning in metal-semiconductor contacts has been extended to metal-interfacial layer (IL)-semiconductor (MIS) contacts using a physics-based approach. Contact resistivity simulations evaluating various ILs on n-Ge indicate the possibility of forming low resistance contacts using TiO2, ZnO, and Sn-doped In2O3 (ITO) layers. Doping of the IL is proposed as an additional knob for lowering MIS contact resistance. This is demonstrated through simulations and experimentally verified with circular-transfer length method and diode measurements on Ti/n(+)-ZnO/n-Ge and Ti/ITO/n-Ge MIS contacts. (C) 2013 AIP Publishing LLC.
 
Publisher AMER INST PHYSICS
 
Date 2014-10-16T13:11:22Z
2014-10-16T13:11:22Z
2013
 
Type Article
 
Identifier JOURNAL OF APPLIED PHYSICS, 113(23)
http://dx.doi.org/10.1063/1.4811340
http://dspace.library.iitb.ac.in/jspui/handle/100/15632
 
Language en