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Ultrafast AC-DC NBTI Characterization of Deep IL Scaled HKMG p-MOSFETs

DSpace at IIT Bombay

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Title Ultrafast AC-DC NBTI Characterization of Deep IL Scaled HKMG p-MOSFETs
 
Creator GOEL, N
NANAWARE, N
MAHAPATRA, S
 
Subject AC duty cycle
AC frequency
AC stress
DC stress
high-k metal gate (HKMG)
negative bias temperature instability (NBTI)
recovery
ultrafast measurements (UFMs)
DLIN TECHNIQUE
 
Description Ultrafast DC and AC negative bias temperature instability (NBTI) measurements are done in high-k metal gate p-MOSFETs having deeply scaled interlayer. Time evolution of degradation during and after DC and AC stress at different duty cycle and frequency are characterized. Impact of last pulse cycle duration (half or full) and pulse low bias on AC stress are studied. Equivalence of measured data from large and small area devices are shown. Experimental results are qualitatively explained using known NBTI physical mechanism.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2014-10-16T13:27:59Z
2014-10-16T13:27:59Z
2013
 
Type Article
 
Identifier IEEE ELECTRON DEVICE LETTERS, 34(12)1476-1478
0741-3106
1558-0563
http://dx.doi.org/10.1109/LED.2013.2284668
http://dspace.library.iitb.ac.in/jspui/handle/100/15665
 
Language en