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Epitaxial Gd2O3 on strained Si1-xGex layers for next generation complementary metal oxide semiconductor device application

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Title Epitaxial Gd2O3 on strained Si1-xGex layers for next generation complementary metal oxide semiconductor device application
 
Creator GHOSH, K
DAS, S
FISSEL, A
OSTEN, HJ
LAHA, A
 
Subject SIGE ALLOYS
MOBILITY
MOSFETS
DIELECTRICS
INTERFACE
GE
 
Description Strained Si1-xGex (x = 0.1-0.4) layers were grown on Si(111) and Si(001) substrates using molecular beam epitaxy followed by the growth of epitaxial Gd2O3 thin films on Si1-xGex layers using same technique. Pt/Gd2O3/Si1-xGex/Si stacks fabricated by several in situ process steps exhibit excellent electrical properties. Surface and microstructural analysis of both Si1-xGex and Gd2O3 layers carried out by different in situ and ex situ tools reveal a relaxed epi-Gd2O3 layer on a strained Si1-xGex layer on both Si(111) and Si(001) substrates with sharp interfaces between the oxide and the SiGe layer. Standard electrical measurements, such as capacitance-voltage and leakage current analysis, demonstrate promising electrical properties for such metal oxide semiconductor capacitors. A capacitance equivalent thickness as low as 1.20 nm with associated leakage current density of 2.0 mA/cm(2) was obtained for devices with 4.5 nm thin oxide films where the density of interface trap (D-it) was only similar to 10(11) cm(-2) eV(-1). (C) 2013 AIP Publishing LLC.
 
Publisher AMER INST PHYSICS
 
Date 2014-10-16T13:37:34Z
2014-10-16T13:37:34Z
2013
 
Type Article
 
Identifier APPLIED PHYSICS LETTERS, 103(15)
0003-6951
1077-3118
http://dx.doi.org/10.1063/1.4824422
http://dspace.library.iitb.ac.in/jspui/handle/100/15684
 
Language en