Quantum-confined stark effect in localized luminescent centers within InGaN/GaN quantum-well based light emitting diodes
DSpace at IIT Bombay
View Archive InfoField | Value | |
Title |
Quantum-confined stark effect in localized luminescent centers within InGaN/GaN quantum-well based light emitting diodes
|
|
Creator |
DE, S
LAYEK, A BHATTACHARYA, S DAS, DK KADIR, A BHATTACHARYA, A DHAR, S CHOWDHURY, A |
|
Subject |
MOLECULAR-BEAM EPITAXY
SPONTANEOUS POLARIZATION EXCITON LOCALIZATION EMISSION DEVICES BLUE |
|
Description |
The nature of the polarization-field in disorder induced nanoscale potential fluctuations (radiative traps) within (In,Ga)N based quantum-well (QW) heterostructures remains ambiguous. Spectrally resolved photoluminescence microscopy has been utilized to probe the local polarization field by monitoring the extent of quantum-confined Stark effect (QCSE) in radiative trap centers spontaneously formed within an (In, Ga) N QW based light emitting diode. Interestingly, two distinct categories of nanoscale radiative domains, which arise from indium compositional and interface-morphology related fluctuations of the active layers, are found to have very different degree of built-in polarization fields. Screening of QCSE in indium-rich emission centers results in blue-shift of transition energies by up to 400meV, significantly higher than that reported previously for group III-nitride based semiconductor heterostructures. A lack of correlation between the extent of QCSE and local indium mole-fractions suggests that size, shape, and strain of individual localization centers play a crucial role in modulating the local polarization field. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4754079]
|
|
Publisher |
AMER INST PHYSICS
|
|
Date |
2014-10-16T14:48:53Z
2014-10-16T14:48:53Z 2012 |
|
Type |
Article
|
|
Identifier |
APPLIED PHYSICS LETTERS, 101(12)
0003-6951 1077-3118 http://dx.doi.org/10.1063/1.4754079 http://dspace.library.iitb.ac.in/jspui/handle/100/15825 |
|
Language |
en
|
|