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Quantum-confined stark effect in localized luminescent centers within InGaN/GaN quantum-well based light emitting diodes

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Title Quantum-confined stark effect in localized luminescent centers within InGaN/GaN quantum-well based light emitting diodes
 
Creator DE, S
LAYEK, A
BHATTACHARYA, S
DAS, DK
KADIR, A
BHATTACHARYA, A
DHAR, S
CHOWDHURY, A
 
Subject MOLECULAR-BEAM EPITAXY
SPONTANEOUS POLARIZATION
EXCITON LOCALIZATION
EMISSION
DEVICES
BLUE
 
Description The nature of the polarization-field in disorder induced nanoscale potential fluctuations (radiative traps) within (In,Ga)N based quantum-well (QW) heterostructures remains ambiguous. Spectrally resolved photoluminescence microscopy has been utilized to probe the local polarization field by monitoring the extent of quantum-confined Stark effect (QCSE) in radiative trap centers spontaneously formed within an (In, Ga) N QW based light emitting diode. Interestingly, two distinct categories of nanoscale radiative domains, which arise from indium compositional and interface-morphology related fluctuations of the active layers, are found to have very different degree of built-in polarization fields. Screening of QCSE in indium-rich emission centers results in blue-shift of transition energies by up to 400meV, significantly higher than that reported previously for group III-nitride based semiconductor heterostructures. A lack of correlation between the extent of QCSE and local indium mole-fractions suggests that size, shape, and strain of individual localization centers play a crucial role in modulating the local polarization field. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4754079]
 
Publisher AMER INST PHYSICS
 
Date 2014-10-16T14:48:53Z
2014-10-16T14:48:53Z
2012
 
Type Article
 
Identifier APPLIED PHYSICS LETTERS, 101(12)
0003-6951
1077-3118
http://dx.doi.org/10.1063/1.4754079
http://dspace.library.iitb.ac.in/jspui/handle/100/15825
 
Language en