Enhancement of anomalous Hall effect in Si/Fe multilayers
DSpace at IIT Bombay
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Title |
Enhancement of anomalous Hall effect in Si/Fe multilayers
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Creator |
DAS, SS
KUMAR, MS |
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Subject |
FILMS
SUPERLATTICES LAYER |
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Description |
Anomalous Hall effect (AHE) studies were performed at 300 K on Si/Fe multilayers prepared by dc magnetron sputtering. About 60 times enhancement in the saturation Hall resistance and 80 times enhancement in anomalous Hall coefficient were obtained in [Si(50 angstrom)/Fe(t(Fe))](20) multilayers when decreasing the Fe layer thickness from 100 to 20 angstrom. The largest anomalous Hall coefficient (R-s) of 1.4 x 10(-7) Omega m T-1 was found for t(Fe) = 20 angstrom, which is about three orders of magnitude larger than that of pure Fe and Fe/Cr, Al/Fe, Cu/Fe, SiO2/FePt/SiO2 multilayers. The ordinary Hall coefficient R-0 was about two orders of magnitude larger than that of pure Fe. The R-s was found to vary with the longitudinal electronic resistivity, rho as R-s alpha rho(2.2), indicating the role of interfaces for the enhancement of the AHE in the multilayers. An increase of Hall sensitivity from 9 m Omega T-1 to 1.2 Omega T-1 was observed on decreasing t(Fe) from 100 to 10 angstrom. The high Hall sensitivity obtained was about three orders of magnitude larger than that of Al/Fe and Cu/Fe multilayers, showing it as an emerging candidate for Hall element for potential applications.
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Publisher |
IOP PUBLISHING LTD
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Date |
2014-10-16T14:57:56Z
2014-10-16T14:57:56Z 2013 |
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Type |
Article
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Identifier |
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 46(37)
http://dx.doi.org/10.1088/0022-3727/46/37/375003 http://dspace.library.iitb.ac.in/jspui/handle/100/15843 |
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Language |
en
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