Record Details

Linear non-hysteretic gating of a very high density 2DEG in an undoped metal-semiconductor-metal sandwich structure

DSpace at IIT Bombay

View Archive Info
 
 
Field Value
 
Title Linear non-hysteretic gating of a very high density 2DEG in an undoped metal-semiconductor-metal sandwich structure
 
Creator DAS GUPTA, K
CROXALL, AF
MAK, WY
BEERE, HE
NICOLL, CA
FARRER, I
SFIGAKIS, F
RITCHIE, DA
 
Subject 2-DIMENSIONAL ELECTRON
HETEROSTRUCTURES
FABRICATION
GASES
 
Description Modulation-doped GaAs-AlGaAs quantum-well-based structures are usually used to achieve very high mobility two-dimensional electron (or hole) gases. Usually high mobilities (>10(7)cm(2) V(-1)s(-1)) are achieved at high densities. A loss of linear gateability is often associated with the highest mobilities, on account of some residual hopping or parallel conduction in the doped regions. We have developed a method of using fully undoped GaAs-AlGaAs quantum wells, where densities approximate to 6 x 10(11)cm(-2) can be achieved while maintaining linear and non-hysteretic gateability. The conducting channel of our device is induced entirely by a field-effect mechanism, when suitable voltages are applied to the top and bottom gates. We do not use any intentional dopants at all. Our method overcomes the problem of gating very high density two-dimensional electronic system. We show how these devices are useful for understanding mobility limiting mechanisms at very high densities and indicate the likely future applications.
 
Publisher IOP PUBLISHING LTD
 
Date 2014-10-16T15:08:00Z
2014-10-16T15:08:00Z
2012
 
Type Article
 
Identifier SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 27(11)
http://dx.doi.org/10.1088/0268-1242/27/11/115006
http://dspace.library.iitb.ac.in/jspui/handle/100/15863
 
Language en