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Growth and Characterization of Na0.5Bi0.5TiO3 Thin Films with BaTiO3 Buffer Layer (Study of Au/Na0.5Bi0.5TiO3/BaTiO3/Pt Capacitor)

DSpace at IIT Bombay

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Title Growth and Characterization of Na0.5Bi0.5TiO3 Thin Films with BaTiO3 Buffer Layer (Study of Au/Na0.5Bi0.5TiO3/BaTiO3/Pt Capacitor)
 
Creator DARYAPURKAR, AS
KOLTE, JT
GOPALAN, P
 
Subject Sodium bismuth titanate
thin films
dielectric
SIMS
PLD
PULSED-LASER DEPOSITION
ELECTRICAL-PROPERTIES
SUBSTRATE
 
Description Lead free bilayer capacitor structure has been fabricated as a combination of sodium bismuth titanate (Na0.5Bi0.5)TiO3 (NBT) thin films with barium titanate, (BaTiO3) (BT) buffer layer in situ using pulsed laser deposition (PLD). PLD control parameters have been optimized using Taguchi approach to obtain good quality NBT and BT thin films. It has been observed that dielectric properties of NBT thin films enhanced by inserting BT buffer layer. This improvement in the dielectric properties of NBT thin films have been discussed in relation to the effect of the buffer layer on the structure, microstructure and interface of the NBT/BT multilayer capacitor.
 
Publisher TAYLOR & FRANCIS LTD
 
Date 2014-10-16T15:09:01Z
2014-10-16T15:09:01Z
2013
 
Type Article
 
Identifier FERROELECTRICS, 447(1)46-55
0015-0193
1563-5112
http://dx.doi.org/10.1080/00150193.2013.821859
http://dspace.library.iitb.ac.in/jspui/handle/100/15865
 
Language en