Demonstration and characterization of an ambipolar high mobility transistor in an undoped GaAs/AlGaAs quantum well
DSpace at IIT Bombay
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Title |
Demonstration and characterization of an ambipolar high mobility transistor in an undoped GaAs/AlGaAs quantum well
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Creator |
CROXALL, AF
ZHENG, B SFIGAKIS, F GUPTA, KD FARRER, I NICOLL, CA BEERE, HE RITCHIE, DA |
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Subject |
FIELD-EFFECT TRANSISTOR
HETEROSTRUCTURES HETEROJUNCTION |
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Description |
We report an ambipolar device fabricated in undoped GaAs/AlGaAs quantum wells (widths 10 and 25 nm) with front and backgates that allow almost two orders of magnitude in density to be accessed in the same device (7 x 10(9) cm(-2) to 5 x 10(11) cm(-2)). By changing the well width, the relative electron and hole mobilities can be tuned, approaching similar velocities. We describe an approach to fully characterize the quantum well, including the impurity backgrounds and both the upper and lower interfaces, making use of the ability to control the carrier density and the position of the wavefunction independently over a wide range. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4793658]
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Publisher |
AMER INST PHYSICS
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Date |
2014-10-16T15:14:03Z
2014-10-16T15:14:03Z 2013 |
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Type |
Article
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Identifier |
APPLIED PHYSICS LETTERS, 102(8)
http://dx.doi.org/10.1063/1.4793658 http://dspace.library.iitb.ac.in/jspui/handle/100/15875 |
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Language |
en
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