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Demonstration and characterization of an ambipolar high mobility transistor in an undoped GaAs/AlGaAs quantum well

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Title Demonstration and characterization of an ambipolar high mobility transistor in an undoped GaAs/AlGaAs quantum well
 
Creator CROXALL, AF
ZHENG, B
SFIGAKIS, F
GUPTA, KD
FARRER, I
NICOLL, CA
BEERE, HE
RITCHIE, DA
 
Subject FIELD-EFFECT TRANSISTOR
HETEROSTRUCTURES
HETEROJUNCTION
 
Description We report an ambipolar device fabricated in undoped GaAs/AlGaAs quantum wells (widths 10 and 25 nm) with front and backgates that allow almost two orders of magnitude in density to be accessed in the same device (7 x 10(9) cm(-2) to 5 x 10(11) cm(-2)). By changing the well width, the relative electron and hole mobilities can be tuned, approaching similar velocities. We describe an approach to fully characterize the quantum well, including the impurity backgrounds and both the upper and lower interfaces, making use of the ability to control the carrier density and the position of the wavefunction independently over a wide range. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4793658]
 
Publisher AMER INST PHYSICS
 
Date 2014-10-16T15:14:03Z
2014-10-16T15:14:03Z
2013
 
Type Article
 
Identifier APPLIED PHYSICS LETTERS, 102(8)
http://dx.doi.org/10.1063/1.4793658
http://dspace.library.iitb.ac.in/jspui/handle/100/15875
 
Language en