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A Physical and SPICE Mobility Degradation Analysis for NBTI

DSpace at IIT Bombay

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Title A Physical and SPICE Mobility Degradation Analysis for NBTI
 
Creator CHAUDHARY, A
MAHAPATRA, S
 
Subject Mathiessen's rule
mobility degradation
negative bias temperature instability (NBTI)
SPICE
threshold voltage degradation
BIAS TEMPERATURE INSTABILITY
P-MOSFETS
IMPACT
MODEL
 
Description The importance of mobility degradation (Delta mu(eff)) due to Negative Bias Temperature Instability (NBTI) stress is studied for precise modeling of p-MOSFET drain current degradation (Delta I-D). An improvement to the SPICE mobility model is presented to incorporate Delta mu(eff), and the modified model is validated against experimental Delta I-D and transconductance degradation (Delta g(m)) over time, in the subthreshold to strong inversion region, across different SiON and high-k metal gate (HKMG) devices. To gain further insight into NBTI mobility degradation, the well-known physics-based mobility model consisting of three scattering components is revalidated across different devices. This analysis is beneficial for device and circuit simulations in Technology CAD and SPICE environments, respectively, for different process technologies.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2014-10-16T15:25:12Z
2014-10-16T15:25:12Z
2013
 
Type Article
 
Identifier IEEE TRANSACTIONS ON ELECTRON DEVICES, 60(7)2096-2103
http://dx.doi.org/10.1109/TED.2013.2259493
http://dspace.library.iitb.ac.in/jspui/handle/100/15897
 
Language en