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Germanium oxynitride gate interlayer dielectric formed on Ge(100) using decoupled plasma nitridation

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Title Germanium oxynitride gate interlayer dielectric formed on Ge(100) using decoupled plasma nitridation
 
Creator BHATT, P
CHAUDHURI, K
KOTHARI, S
NAINANI, A
LODHA, S
 
Subject MOS DIELECTRICS
PERFORMANCE
MOSFETS
OXIDE
 
Description Germanium Oxynitride (GeON) gate interlayer (IL) dielectric formed using decoupled plasma nitridation (DPN) technique is compared with GeO2 and thermally nitrided GeON ILs for Ge gate stack applications using n-channel capacitors and transistors. Lower nitrogen concentration and roughness at the GeON/Ge interface lead to lower midgap interface trap density (D-it) and 1.5 x higher electron mobility for the DPN versus thermally nitrided GeON IL. DPN GeON IL also exhibits enhanced thermal stability till 575 degrees C at the expense of a small degradation in D-it versus GeO2 IL, making it a more viable gate IL dielectric on Ge channels. (C) 2013 AIP Publishing LLC.
 
Publisher AMER INST PHYSICS
 
Date 2014-10-17T04:45:37Z
2014-10-17T04:45:37Z
2013
 
Type Article
 
Identifier APPLIED PHYSICS LETTERS, 103(17)
0003-6951
1077-3118
http://dx.doi.org/10.1063/1.4826142
http://dspace.library.iitb.ac.in/jspui/handle/100/15983
 
Language en