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High Quality Al2O3 Dielectric Films Deposited by Pulsed-DC Reactive Sputtering Technique for High-k Applications

DSpace at IIT Bombay

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Title High Quality Al2O3 Dielectric Films Deposited by Pulsed-DC Reactive Sputtering Technique for High-k Applications
 
Creator BHAISARE, M
MISRA, A
WAIKAR, M
KOTTANTHARAYIL, A
 
Subject High-k Al2O3 Dielectric
Inter-Poly Dielectric (IPD)
Reactive Sputtering
Pulse-DC Power Supply
Surface Passivation for Silicon Solar Cell
ALUMINUM-OXIDE FILMS
VAPOR-DEPOSITION
THIN-FILMS
COATINGS
SILICON
 
Description This paper presents high quality high-k Al2O3 dielectric films deposited by reactive sputtering technique with pulsed-DC (p-DC) power supply source. Process parameters are optimized to obtain Al2O3 dielectric film with high effective breakdown field (E-BD) of 18.07 MV/cm and dielectric constant (k) of 8.15 with an equivalent oxide thickness (EOT) of 8.59 nm, suitable for inter-poly dielectric (IPD) of floating gate flash memory applications. X-ray photoelectron spectroscopy (XPS) measurement is performed for films deposited with different gas flow ratios and it is observed that the film stoichiometry can be changed by varying the gas flow ratio. A low surface roughness of 3.2 angstrom is observed by atomic force microscopy (AFM) measurement on these films. Al2O3 films deposited at high power are found to be interesting for surface passivation of p-type silicon for solar cell applications.
 
Publisher AMER SCIENTIFIC PUBLISHERS
 
Date 2014-10-17T04:49:11Z
2014-10-17T04:49:11Z
2012
 
Type Article; Proceedings Paper
 
Identifier NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 4(6)645-650
http://dx.doi.org/10.1166/nnl.2012.1362
http://dspace.library.iitb.ac.in/jspui/handle/100/15990
 
Language en