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Strain-tunable band gap in graphene/h-BN hetero-bilayer

DSpace at IIT Bombay

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Title Strain-tunable band gap in graphene/h-BN hetero-bilayer
 
Creator BEHERA, H
MUKHOPADHYAY, G
 
Subject Nanostructures
Ab initio calculations
Electronic structure
Transport properties
PLANE-WAVE METHOD
ELECTRONIC-PROPERTIES
RAMAN-SPECTROSCOPY
 
Description Using full-potential density functional calculations within local density approximation (LDA), we predict that mechanically tunable band-gap and quasi-particle-effective-mass are realizable in graphene/hexagonal-BN hetero-bilayer (C/h-BN HBL) by application of in-plane homogeneous biaxial strain. While providing one of the possible reasons for the experimentally observed gap-less pristine-graphene-like electronic properties of C/h-BN HBL, which theoretically has a narrow band-gap, we suggest a schematic experiment for verification of our results which may find applications in nano-electromechanical systems (NEMS), nano opto-mechanical systems (NOMS) and other nano-devices based on C/h-BN HBL. (C) 2012 Elsevier Ltd. All rights reserved.
 
Publisher PERGAMON-ELSEVIER SCIENCE LTD
 
Date 2014-10-17T04:58:18Z
2014-10-17T04:58:18Z
2012
 
Type Article
 
Identifier JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 73(7)818-821
0022-3697
1879-2553
http://dx.doi.org/10.1016/j.jpcs.2012.02.010
http://dspace.library.iitb.ac.in/jspui/handle/100/16008
 
Language en