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Evidence of long-wave-infrared excited state transition at high temperature (200 K) in 35-layer In0.50Ga0.50As/GaAs quantum dot infrared photodetector

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Title Evidence of long-wave-infrared excited state transition at high temperature (200 K) in 35-layer In0.50Ga0.50As/GaAs quantum dot infrared photodetector
 
Creator ADHIKARY, S
CHAKRABARTI, S
 
Description Fabricating quantum dot infrared photodetectors (QDIPs) operable under high temperatures has remained a challenge. The authors report the performance of multispectrum 35-layer In0.50Ga0.50As/GaAs QDIP at high temperatures. Results showed three photoresponse peaks at similar to 5.6, 7.4, and 11.5 mu m. The third peak is observed only at 200 K, possibly because of transition of electrons from the second excited state of the quantum dot to GaAs barrier state. Peak responsivity value (similar to 140 mA/W) and maximum D* value (similar to 1.25 x 10(10) cm.Hz(1/2)/W) is reached at 1.5V. Responsivity is higher (210mA/W) at 150K than 77K, possibly because of better transport of carriers at higher temperatures. The D* values are similar to 4.33 x 10 8 cm.Hz(1/2)/W at 150K and similar to 3.3 x 10(6) cm.Hz(1/2)/W at 200K at 1.0V bias. (C) 2013 American Vacuum Society.
 
Publisher A V S AMER INST PHYSICS
 
Date 2014-10-17T06:10:46Z
2014-10-17T06:10:46Z
2013
 
Type Article
 
Identifier JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 31(3)
http://dx.doi.org/10.1116/1.4801791
http://dspace.library.iitb.ac.in/jspui/handle/100/16150
 
Language en