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Memory Elements Using Multiterminal Magnetoresistive Devices

DSpace at IIT Bombay

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Title Memory Elements Using Multiterminal Magnetoresistive Devices
 
Creator ADARI, R
BANERJEE, D
GANGULY, S
SAHA, D
 
Subject SEMICONDUCTOR SPINTRONICS
 
Description We have theoretically designed and experimentally demonstrated a multiterminal lateral magnetoresistive device using electrical spin injection and detection in semiconductor, which can act as a memory array. The memory state is associated with the direction of the magnetization state. The state is read out from clear transition in current both in magnitude and direction depending on the relative magnetization direction. The current shows a plateau in varying magnetic field regions indicating stable magnetization direction due to differences in coercivity. The device characteristics are well explained in the framework of two-dimensional spin transport and spin-dependent tunneling. (C) 2013 The Japan Society of Applied Physics
 
Publisher JAPAN SOC APPLIED PHYSICS
 
Date 2014-10-17T06:14:55Z
2014-10-17T06:14:55Z
2013
 
Type Article
 
Identifier APPLIED PHYSICS EXPRESS, 6(4)
http://dx.doi.org/10.7567/APEX.6.043002
http://dspace.library.iitb.ac.in/jspui/handle/100/16158
 
Language en