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Schottky barrier heights for Au and Pd contacts to MoS2

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Title Schottky barrier heights for Au and Pd contacts to MoS2
 
Creator KAUSHIK, N
NIPANE, A
BASHEER, F
DUBEY, S
GROVER, S
DESHMUKH, MM
LODHA, S
 
Subject TRANSITION-METAL DICHALCOGENIDES
SINGLE-LAYER MOS2
MONOLAYER MOS2
TRANSISTORS
RESISTANCE
MOBILITY
 
Description The search of a p-type metal contact on MoS2 has remained inconclusive, with high work function metals such as Au, Ni, and Pt showing n-type behavior and mixed reports of n as well as p-type behavior for Pd. In this work, we report quantitative Schottky barrier heights for Au and Pd contacts to MoS2 obtained by analysing low temperature transistor characteristics and contact resistance data obtained using the transfer length method. Both Au and Pd exhibit n-type behavior on multilayer as well as monolayer MoS2 transistors with Schottky barrier heights of 0.126 eV and 0.4 eV, and contact resistances of 42 Omega.mm and 18 x 10(4) Omega.mm respectively. Scanning photocurrent spectroscopy data is in agreement with the resulting energy band alignment in Au-MoS2-Pd devices further reinforcing the observation that the Fermi-level is pinned in the upper half of MoS2 bandgap. (C) 2014 AIP Publishing LLC.
 
Publisher AMER INST PHYSICS
 
Date 2014-12-28T09:20:38Z
2014-12-28T09:20:38Z
2014
 
Type Article
 
Identifier APPLIED PHYSICS LETTERS, 105(11)
0003-6951
1077-3118
http://dx.doi.org/10.1063/1.4895767
http://dspace.library.iitb.ac.in/jspui/handle/100/16272
 
Language English