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Structure and strain relaxation effects of defects in InxGa1-xN epilayers

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Title Structure and strain relaxation effects of defects in InxGa1-xN epilayers
 
Creator RHODE, SL
FU, WY
MORAM, MA
MASSABUAU, FCP
KAPPERS, MJ
MCALEESE, C
OEHLER, F
HUMPHREYS, CJ
DUSANE, RO
SAHONTA, SL
 
Subject MULTIPLE-QUANTUM WELLS
INGAN/GAN MULTIQUANTUM WELLS
CHEMICAL-VAPOR-DEPOSITION
LIGHT-EMITTING DEVICES
X-RAY-DIFFRACTION
OPTICAL-PROPERTIES
V-DEFECTS
BAND-GAP
MISFIT DISLOCATIONS
FORMATION MECHANISM
 
Description The formation of trench defects is observed in 160 nm-thick InxGa1-xN epilayers with x
 
Publisher AMER INST PHYSICS
 
Date 2014-12-28T11:01:22Z
2014-12-28T11:01:22Z
2014
 
Type Article
 
Identifier JOURNAL OF APPLIED PHYSICS, 116(10)
0021-8979
1089-7550
http://dx.doi.org/10.1063/1.4894688
http://dspace.library.iitb.ac.in/jspui/handle/100/16305
 
Language English