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UV electroluminescence from p-ZnO:P/n-ZnO homojunction diode

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Title UV electroluminescence from p-ZnO:P/n-ZnO homojunction diode
 
Creator NAGAR, S
CHAKRABARTI, S
 
Subject LIGHT-EMITTING-DIODES
THIN-FILMS
PHOSPHORUS
 
Description The reliability of p-type ZnO thin films obtained by phosphorus implantation, using plasma-immersion ion implantation, followed by rapid thermal annealing is reported. Also reported is the fabrication of a ZnO-based homojunction light-emitting diode. Low-temperature photoluminescence measurements after six months showed a dominant free electron-to-acceptor peak for samples annealed at 900 and 1000 degrees C, confirming the formation of p-type films. Room-temperature electroluminescence spectra for the p-ZnO:P/n-ZnO homojunction diode revealed ultraviolet (UV) emission at 3.18 eV; however, the dominant peak was observed at 1.8 eV because of a deep-level defect peak. Achieving dominant UV emission requires further optimisation of the device structure.
 
Publisher INST ENGINEERING TECHNOLOGY-IET
 
Date 2014-12-28T11:27:25Z
2014-12-28T11:27:25Z
2014
 
Type Article
 
Identifier ELECTRONICS LETTERS, 50(18)1307-1308
0013-5194
1350-911X
http://dx.doi.org/10.1049/el.2014.2055
http://dspace.library.iitb.ac.in/jspui/handle/100/16357
 
Language English