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Effect of post deposition annealing on thermal evaporated ZnSe:Te towards a scintillator application

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Title Effect of post deposition annealing on thermal evaporated ZnSe:Te towards a scintillator application
 
Creator CHATTERJEE, U
DAS, A
GHOSH, T
DUTTAGUPTA, SP
GANDHI, MN
SINGH, SG
 
Subject Scintillator
ZnSe:Te
Thermal evaporator
LASER
 
Description ZnSe having a wide but direct bandgap (bulk band gap 2.7 eV) is very efficient for detecting nuclear radiations by using its scintillation property. With a high absolute light output and radiation spectra which match well with Si-photodiode spectral sensitivity, ZnSe scintillators have adequately minimized the gap between "scintillator-photodiode" series for modern radiation detectors. Promising features like long decay time and high values of intrinsic radiation absorption make ZnSe based scintillators a very interesting research filed. Here in this report, we investigate an inexpensive and easy method to realize ZnSe:Te film on a quartz substrate. ZnSe:Te film is deposited using a thermal evaporator using ZnSe and ZnTe powders as raw materials to start with. After the deposition, the samples are exposed to a thermal annealing step for 1 h. The temperatures are kept at 624,674 and 724 K. We have confirmed presence of a preferred [1 1 1] oriented polycrystalline ZnSe:Te thin films by XRD experiments. Photoluminescence experiment using a He:Cd laser at 324 nm at low temperature (8 K) reports an emission at 2.54 eV due to non-equilibrium carrier plasma. (C) 2014 Elsevier B.V. All rights reserved.
 
Publisher ELSEVIER SCIENCE BV
 
Date 2014-12-28T12:37:39Z
2014-12-28T12:37:39Z
2014
 
Type Article
 
Identifier MICROELECTRONIC ENGINEERING, 12684-87
0167-9317
1521-3757
http://dx.doi.org/10.1016/j.mee.2014.06.016
http://dspace.library.iitb.ac.in/jspui/handle/100/16559
 
Language English