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The ALD-MLD Growth of a ZnO-Zincone Heterostructure

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Title The ALD-MLD Growth of a ZnO-Zincone Heterostructure
 
Creator CHOUDHURY, D
SARKAR, SK
 
Subject ALD
MLD
Nanosheets
Zincone
ZnO
MOLECULAR LAYER DEPOSITION
INORGANIC HYBRID MATERIALS
THIN-FILMS
MONOLAYER-PRECISION
ETHYLENE-GLYCOL
AL2O3
SUPERLATTICES
DIETHYLZINC
MULTILAYERS
FABRICATION
 
Description A mixed inorganic/organic zinc oxide/zincone multilayer film, using a combination of atomic layer deposition (ALD) and molecular layer deposition (MLD), is grown. A molecular fragment is deposited in each half reaction in the MLD technique, thus making it similar to, and compatible with, the ALD method of deposition. Zinc oxide inorganic layers are grown at a substrate temperature of 150 degrees C with alternate surface-saturating reactions of diethylzinc and water. Under similar growth condition, diethylzinc and hydroquinone are used to deposit an organic zincone layer that follows the MLD reaction mechanism. Deposition rates are obtained from an in-situ quartz crystal microbalance (QCM) and verified using X-ray reflectivity (XRR) measurements and scanning electron microscopy (SEM). Chemical constituents of the hybrid layers are confirmed from secondary ion mass spectroscopy (SIMS) and Fourier transform infrared (FTIR) spectroscopy. Selective etching of the organic layers results in the formation of zinc oxide nanosheets stacked together by van der Waals attraction balanced by Coulombic repulsion.
 
Publisher WILEY-V C H VERLAG GMBH
 
Date 2014-12-28T12:51:32Z
2014-12-28T12:51:32Z
2014
 
Type Article
 
Identifier CHEMICAL VAPOR DEPOSITION, 20(4/6)130-137
0948-1907
1521-3862
http://dx.doi.org/10.1002/cvde.201307092
http://dspace.library.iitb.ac.in/jspui/handle/100/16610
 
Language English