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Effect of Mesa Structure Formation on the Electrical Properties of Zinc Oxide Thin Film Transistors

DSpace at IIT Bombay

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Field Value
 
Title Effect of Mesa Structure Formation on the Electrical Properties of Zinc Oxide Thin Film Transistors
 
Creator SINGH, S
CHAKRABARTI, P
 
Subject Zinc Oxide
Bottom-Gate
Mesa Structure
Thin Film Transistor (TFT)
Sol-Gel etc.
ZNO
DEPOSITION
TEMPERATURE
TRANSPARENT
LAYER
TFT
 
Description ZnO based bottom-gate thin film transistor (TFT) with SiO2 as insulating layer has been fabricated with two different structures. The effect of formation of mesa structure on the electrical characteristics of the TFTs has been studied. The formation of mesa structure of ZnO channel region can definitely result in better control over channel region and enhance value of channel mobility of ZnO TFT. As a result, by fabricating a mesa structured TFT, a better value of mobility and on-state current are achieved at low voltages. A typical saturation current of 1.85 x 10(-7) A under a gate bias of 50 V is obtained for non mesa structure TFT while for mesa structured TFT saturation current of 5 x 10(-5) A can be obtained at comparatively very low gate bias of 6.4 V.
 
Publisher AMER SCIENTIFIC PUBLISHERS
 
Date 2014-12-28T13:00:48Z
2014-12-28T13:00:48Z
2014
 
Type Article
 
Identifier JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 14(5)3552-3556
1533-4880
1533-4899
http://dx.doi.org/10.1166/jnn.2014.8720
http://dspace.library.iitb.ac.in/jspui/handle/100/16643
 
Language English