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A Detailed Study of Gate Insulator Process Dependence of NBTI Using a Compact Model

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Title A Detailed Study of Gate Insulator Process Dependence of NBTI Using a Compact Model
 
Creator JOSHI, K
MUKHOPADHYAY, S
GOEL, N
NANWARE, N
MAHAPATRA, S
 
Subject Charge pumping (CP)
DCIV
flicker noise
high-k metal gate (HKMG)
negative bias temperature instability (NBTI) modeling
silicon oxynitride (SiON)
trap generation
trapping
V-T shift
BIAS TEMPERATURE INSTABILITY
INTERFACE-TRAP GENERATION
I-DLIN TECHNIQUE
SION P-MOSFETS
PHYSICAL-MECHANISM
DEGRADATION
NITROGEN
 
Description Process impact of negative bias temperature instability (NBTI) is studied in silicon oxynitride (SiON) and high-k metal gate (HKMG) p-MOSFETs. An analytical compact model is used to predict long time degradation. NBTI is shown to be governed by the generation of interface and bulk oxide traps and hole trapping in preexisting traps that are mutually uncorrelated. Experimental evidences are provided to independently verify underlying components. Model parameters are extracted; only a few process-dependent parameters are needed to predict the experimental data from wide range of SiON and HKMG p-MOSFETs at various stress bias and temperature. Similarity between SiON and HKMG devices is highlighted.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2014-12-28T14:13:48Z
2014-12-28T14:13:48Z
2014
 
Type Article
 
Identifier IEEE TRANSACTIONS ON ELECTRON DEVICES, 61(2)408-415
0018-9383
1557-9646
http://dx.doi.org/10.1109/TED.2013.2295844
http://dspace.library.iitb.ac.in/jspui/handle/100/16724
 
Language English