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Metal-Gate Granularity-Induced Threshold Voltage Variability and Mismatch in Si Gate-All-Around Nanowire n-MOSFETs

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Title Metal-Gate Granularity-Induced Threshold Voltage Variability and Mismatch in Si Gate-All-Around Nanowire n-MOSFETs
 
Creator NAYAK, K
AGARWAL, S
BAJAJ, M
OLDIGES, PJ
MURALI, KVRM
RAO, VR
 
Subject Gate-all-around (GAA)
metal-gate granularity (MGG)
mismatch
silicon nanowire FET
threshold voltage
variability
work function (WF)
WORK FUNCTION
TRANSISTORS
PERFORMANCE
 
Description The metal-gate granularity-induced threshold voltage (V-T) variability and V-T mismatch in Si gate-all-around (GAA) nanowire n-MOSFETs (n-NWFETs) are studied using coupled 3-D statistical device simulations considering quantum corrected room temperature drift-diffusion transport. The impact of metal-gate crystal grain size on linear and saturation mode V-T variability are analyzed. The V-T mismatch study predicts lower mismatch figure of merit (A(VT)) in TiN-gated Si GAA n-NWFETs compared with the reported experimental mismatch data for TiN-gated Si FinFETs.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2014-12-28T14:15:48Z
2014-12-28T14:15:48Z
2014
 
Type Article
 
Identifier IEEE TRANSACTIONS ON ELECTRON DEVICES, 61(11)3892-3895
0018-9383
1557-9646
http://dx.doi.org/10.1109/TED.2014.2351401
http://dspace.library.iitb.ac.in/jspui/handle/100/16728
 
Language English