Record Details

Role of Injection Barrier in Capacitance-Voltage Measurements of Organic Devices

DSpace at IIT Bombay

View Archive Info
 
 
Field Value
 
Title Role of Injection Barrier in Capacitance-Voltage Measurements of Organic Devices
 
Creator NIGAM, A
NAIR, PR
PREMARATNE, M
RAO, VR
 
Subject Pentacene
Capacitance
Injection Barrier
Organic field effect transistor
 
Description Capacitance-voltage (C-V) measurements represent a very useful technique, however, its usage in organic devices has been a subject of debate because of the role played by the ambient-induced unintentional doping. In this letter, we show that, contrary to the current understanding, prolonged ambient exposure does not significantly increase the unintentional doping density of organic semiconductors (OSCs). Our C-V measurements and detailed numerical simulations clearly indicate that the observed dispersion in C-V characteristics can be attributed to the variation in the carrier injection barrier at the OSC/electrode interface. An analytical relation between the injection barrier and the response time is derived to describe the C-V characteristics of organic devices.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2014-12-28T14:19:48Z
2014-12-28T14:19:48Z
2014
 
Type Article
 
Identifier IEEE ELECTRON DEVICE LETTERS, 35(5)581-583
0741-3106
1558-0563
http://dx.doi.org/10.1109/LED.2014.2313411
http://dspace.library.iitb.ac.in/jspui/handle/100/16736
 
Language English