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High Performance 400 degrees C p(+)/n Ge Junctions Using Cryogenic Boron Implantation

DSpace at IIT Bombay

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Title High Performance 400 degrees C p(+)/n Ge Junctions Using Cryogenic Boron Implantation
 
Creator BHATT, P
SWARNKAR, P
BASHEER, F
HATEM, C
NAINANI, A
LODHA, S
 
Subject Germanium (Ge)
cryogenic implantation
contact resistivity
dopant activation
source/drain junction
GERMANIUM
CONTACTS
MOSFETS
MODEL
 
Description We report high performance Ge p(+)/n junctions using a single, cryogenic (-100 degrees C) boron ion implantation process. High activation >4 x 10(20) cm(-3) results in specific contact resistivity of 1.7 x 10(-8) Omega-cm(2) on p(+)-Ge, which is close to ITRS 15 nm specification (1 x 10(-8) Omega-cm(2)) and nearly 4.5x lower than the state of the art (8 x 10(-8) Omega-cm(2)). Cryogenic implantation is shown to enable solid-phase epitaxial regrowth and lower junction depth through amorphization of the surface Ge layer. These improvements in Ge p(+)/n junctions can pave the way for future high mobility Ge p-MOSFETs.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2014-12-28T14:20:19Z
2014-12-28T14:20:19Z
2014
 
Type Article
 
Identifier IEEE ELECTRON DEVICE LETTERS, 35(7)717-719
0741-3106
1558-0563
http://dx.doi.org/10.1109/LED.2014.2326694
http://dspace.library.iitb.ac.in/jspui/handle/100/16737
 
Language English